HAL (France)
open access
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga 2 O 3 Epitaxy and its Impact on the In‐Plane Electronic Conduction
Abstract Unintentionally doped (001)‐oriented orthorhombic κ‐Ga 2 O 3 epitaxial films on c‐plane sapphire substrates are characterized by the presence of ≈ 10 nm wide columnar rotational domains that can severely inhibit in‐plane electronic conduction. Comparing the in‐ and out‐of‐plane resistance o
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