Open Research
metadata only
Effect of irradiation temperature on post-irradiation strain levels in Ge ₓSi ₁₋ₓ/Si strained layer heterostructures
Double crystal x-ray diffraction (DCXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectroscopy and channelling (RBS-C) were used to study the effect of irradiation temperature and ion-energy on the perpendicular strain (ε ⊥) in Ge xSi 1-xSi strained layer heterostructur
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Electronic States, Spin-Orbit Coupling and Magnetism in Germanium 60° Dislocations#1063840
- Strain-Tunable Spin Relaxation in Germanium from First Principles#819184
- Strain-Tunable Spin Relaxation in Germanium from First Principles#809192
- Ultra-high Mobility 2DEG Heterostructure Fabricate by Oxide Molecular Beam Epitaxy for Device Application#383035
- Vacancy-Enhanced $N-N$ Bonding and Deep Level Complex Defect Formation in $β-Ga_2O_3$#1354904
Record · ID 1313537
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive