Sub-Micron Gate $β-Ga_{2}O_{3}$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $10^{9}$

In this work, we demonstrate submicron-gate $β-Ga_{2}O_{3}$ FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 100 nm-wide fins to improve electrostatic control of a high sheet charge density channel of $3.3\times 10^{13}$ cm-2. A 15