HAL (France)
open access
ALD grown (001) κ-Ga2O3 epitaxial thin films on c-plane sapphire: influence of thickness and thermal annealing
Atomic layer epitaxy of high quality κ-Ga2O3 thin films on c-plane sapphire using atomic layer deposition (ALD) offers new opportunities for optoelectronics and power electronics. However, the effects of increasing the number of cycles to increase the κ-Ga2O3 film thickness in the range of 20–100 nm
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