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Growth-induced trade-off between polarity, electrical isolation, and structural quality in AlN grown on Si(111) by plasma-assisted molecular beam epitaxy
We investigate the effects of substrate temperature and Al flux, at a fixed N flux, on the polarity, electrical properties, and structural quality of AlN films grown on high-resistivity Si(111) by plasma-assisted molecular beam epitaxy. N-rich conditions result in relatively highly resistive Al-pola
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