HAL (France)
open access
Performance-limiting electron and hole traps in 4H-SiC PiN power diodes determined by combined DLTFS and TCAD studies
The performance-limiting electron and hole trapping centers in 4H-SiC PiN power diodes are determined by combined deep-level transient Fourier spectroscopy (DLTFS) experiments and technology computer-aided design (TCAD) simulations. Two electron traps E1 (EC − 0.19 eV) and E2 (EC − 0.67 eV) and thre
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