HAL (France)
open access
Submicron Double Heterojunction Bipolar Transistors on Indium Phosphide‐on‐Silicon
In this work, we report the fabrication and characterisation of an InGaAs/InP double heterojunction bipolar transistor (DHBT) on an indium phosphide-on-silicon (InPoSi) substrate. The device exhibits a DC current gain of 65. Dynamic measurements performed on a submicron 0.35 × 3 µm 2 device
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