HAL (France)
open access
Power Performance of CMOS-Compatible 100 nm Slanted-Gate GaN HEMTs in the Ka-Band
This paper reports on the fabrication, physical characterization, and non-linear modeling of 100 nm slanted-gate GaN-on-silicon HEMTs processed using a CMOS-compatible platform. This technology enables state-of-the-art DC and RF performance, with a maximum drain current density of 0.9 A/mm,
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