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Thermoelectric properties and modulation doping of ultrawide-bandgap nitride monolayers
Two-dimensional III-nitride alloys provide a composition-tunable platform for exploring thermoelectric transport and intrinsic electric-field tolerance. We combine first-principles electronic-structure calculations with semiclassical transport for ordered monolayer B$_{x}$Al$_{1-x}$N and B$_{x}$Ga$_
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