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Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. II. Adsorption of nonmetal atoms (N, P, As, and Sb) on Ga-terminated surfaces
Ab initio calculations were used to simulate the adsorption processes on Ga-terminated surfaces of tetrahedral semiconductors: GaN, GaP, GaAs and GaSb. The considered adsorbates are nonmetal species, i.e., nitrogen, phosphorus, arsenic, and antimony on wurtzite gallium nitride, i.e., GaN(0001) surfa
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