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Selective GaN Growth on 2D h-BN for MEMS Resonators Fabrication on Flexible Substrates

Ali Kassem
HAL (France) · Papers · License: Open Access
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semi
Substrats flexibles, Quasi-Van der Waals epitaxy, MEMS Resonators, 2, Nitrure de bore hexagonal 2D, Semi-conducteurs III-N, 2D hexagonal-Boron Nitride, 1
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Record · ID 344314
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