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Reliability of NiO/β-Ga₂O₃ bipolar heterojunction
Ultra-wide bandgap (UWBG) NiO/β-Ga2O3 p-n junction has recently emerged as a key building block for emerging electronic and optoelectronic devices. However, the long-term reliability of this bipolar junction remains elusive. Here, the temporal evolution of the transient parametric shift is character
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