Fast-Neutron Irradiation Effect in Heteroepitaxial $β$-Ga$_2$O$_3$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

In this work, we investigate the response of Ni/$β$-Ga$_2$O$_3$ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{15}$ n$\cdot$cm$^{-2}$. The LPCVD-grown heteroepitaxial structure consists of an unintentionally doped buffer, an n$^{+}$