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Epitaxial growth of WO3 on r-plane sapphire by hot-filament metal-oxide deposition using CO2 as a precursor
The deposition of epitaxial films of WO3 by hot-filament metal-oxide deposition using CO2 as a precursor was demonstrated. The films were obtained at a low growth rate of 0.25 nm/min. The optical properties of the film were assessed by variable-angle spectroscopic ellipsometry, indicating transparen
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