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Surface roughness and interface engineering for gate dielectrics on strained layers
The change in the morphology of various gate dielectrics (including deposited ZrO2 and TiO2) on strained-Si on relaxed SiGe/Si and strained-SiGe layers is studied using an atomic force microscope (AFM). The AFM observation was carried out before and after oxidation. It has been found that the oxidat
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