HAL (France)
open access
Role and dynamical evolution of intrinsic divacancies in the growth process of epitaxial GaN
The presence of defect complexes, namely the VN-VGa divacancy, in metal-organic vapor phase epitaxy grown GaN systems translates into device degradation with severe consequences particularly important in power electronics applications. To get an insight into the behavior of this type of defects, we
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure#685361
- Effect of metal/semiconductor interface on the resistance of a nonalloyed p-GaN/Ni–Au contact#922846
- Strain and Interface-Driven Localized Emission in MoSe 2 Monolayers on GaN Nanopillars#1390848
- Online Junction-Temperature Sensing of GaN GITs Utilizing the Gate Diode Forward Voltage / Tianlong Benjamin Albert, Tudor Sechel, Daniel Baggen, Rik W. de Doncker#970401
- Nanoscale phase separation and pseudogap in the hole-doped cuprates from fluctuating Cu-O-Cu bonds#1158039
Record · ID 1434471
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive